The GOSSAMER project developed technologies for very high density Non Volatile Memories for mass storage applications down to the 22 nm technology node. The project was able to develop the TANOS technology in an industrial environment, proving its feasibility on a fully functional large scale demonstrator. The availability of such a large device allowed collecting statistically significant data of the reproducibility and reliability of the technology. A large spectrum of materials was investigated for the trapping and blocking layers, and good results were demonstrated with the Barrier Engineered tunnel dielectric. The project also covered the possibility of 3-D stacking of memory arrays, and functional cells were demonstrated with two different approaches.