This research project, supported by the European Union, aims at establishing a leadership position for the European semiconductor industry in the area of SiGe HBTs (Silicon-Germanium Heterojunction Bipolar Transistors) for millimetre wave applications. The DOTFIVE technology sets out to be a key enabler for silicon-based millimetre wave circuits, penetrating the so-called THz gap, enabling enhanced imaging systems with applications in the security, medical and scientific area.