RAPID Reactive Atmospheric Plasma processIng eDucation network Marie-Curie Initial Training Network (MC-ITN): ESR 11 Plasma assisted thin film deposition of metal oxides: Plasma enhanced ALD process development and investigation of functional properties
Plasma assisted thin film deposition (Plasma ALD) for transparent conducting oxide (TCOs, ZnO, Ga2O3, In2O3 and it alloys, AlZnO, InGaZnO) using metalorganic precursors. A major focus will be thin film process development for TCOs (on different substrate materials glass, plastic or polymers) and investigating the functional properties. In-situ diagnostic tools will be used to monitor film growth, study the growth mechanism and to optimize the PE-ALD process supported by modeling.
Nr of positions available : 1
Early stage researcher or 0-4 yrs (Post graduate)
First Stage Researcher (R1)
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