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The research program aims at developing optoelectronic devices based on epitaxial silicon germanium heterostructures. The candidate will perform the epitaxial deposition of SiGe heterostructures, fabricate optoelectronic devices (modulators and photodetectors) by means of optical lithography and characterize them by photocurrent measurements. A relevant topic will be the deposition of heavily doped Ge epilayers for applications in the field of far infrared plasmonics.
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