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The research program aims at extracting from X-ray diffraction (XRD) measurements information on the mechanism leading to strain relaxation in SiGe epilayers deposited on silicon substrates. In particular the nominee should perform experiments and data analysis aiming at figuring out the nature of misfit and threading dislocations forming during the epitaxial growth of Ge-rich SiGe alloys on substrates with different orientations. The result of such an analysis will be used to develop deposition strategies aiming at reducing the detrimental effects of dislocations on the lifetime and mobility of electrons in heavily doped Ge epilayers to be used for infrared plasmonic applications.
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