Fellowship & Grant details

Fellowship posted by Italian Ministry of Education, University and Research (16/11/2013 02.38)

X-ray diffraction analysis of strain relaxation mechanisms in silicon-germanium epilayers

Please note that the job is no longer active!

The research program aims at extracting from X-ray diffraction (XRD) measurements information on the mechanism leading to strain relaxation in SiGe epilayers deposited on silicon substrates. In particular the nominee should perform experiments and data analysis aiming at figuring out the nature of misfit and threading dislocations forming during the epitaxial growth of Ge-rich SiGe alloys on substrates with different orientations. The result of such an analysis will be used to develop deposition strategies aiming at reducing the detrimental effects of dislocations on the lifetime and mobility of electrons in heavily doped Ge epilayers to be used for infrared plasmonic applications.

Please note that the full description may be available in the national language since some job boards have their own publication policy. Thank you for your understanding!

Research Fields


Programme Description
Eligible destination country/ies for fellowsItaly
Eligibility of fellows: country/ies of residenceItaly
Eligibility of fellows: nationality/iesAll
Website of Fellowship Programme
Fellowship's Details
Career StageExperienced researcher or 4-10 yrs (Post-Doc)
Research ProfilesNot defined
GET MORE! The EURAXESS Services Centres

To better plan and organise their stay in a foreign European country, researchers and their families can also benefit of the free and personalised assistance offered by the EURAXESS Services Centres, a network of more than 200 centres located in 40 different European countries.

Application deadline


Other fellowship details


Funding organisation / Contacts
Dipartimento di Fisica - Politecnico

Public research
Milano - Italy