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Fellowship & Grant details

Fellowship posted by Italian Ministry of Education, University and Research (07/05/2013 02.35)

Simulation and optimization of graphene field-effect transistors

Please note that the job is no longer active!

Graphene field-effect transistors (GFET) for analog high-frequency applications will be simulated and optimized. The optimization will concern primarily the saturation of the output characteristics, which is believed can be achieved by exploiting the negative differential resistance effects of p-n junctions in graphene, by means of the proper choice of the source/drain metal contacts, of the gate dielectric thickness, etc. The investigation will be carried out by means of a quantum-mechanical transport simulator suitably adapted for this purpose.

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Research Fields

Engineering - Electronic engineering

Eligibility criteria

to apply for research grants fill out the form available at the following address: https://www.aric.unibo.it/AssegniRicerca/BandiPubblicati/zz_Bandi_din.aspx


Programme Description
Eligible destination country/ies for fellowsItaly
Eligibility of fellows: country/ies of residenceAll
Eligibility of fellows: nationality/iesAll
Website of Fellowship Programmehttps://www.aric.unibo.it/AssegniRicerca/BandiPubblicati/zz_Bandi_din.aspx
Fellowship's Details
Career StageEarly stage researcher or 0-4 yrs (Post graduate)
Research ProfileNot defined
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Application deadline

24/05/2013

Other fellowship details
Fellowship ID

53030

EU Research Framework Programme

FP7/Other

Funding organisation / Contacts
ALMA MATER STUDIORUM - UNIVERSITA' DI BOLOGNA - - CENTRO DI ECCELLENZA ARCES -CENTRO DI RICERCA SUI SISTEMI ELETTRONICI …

Public research
Bologna - Italy
www.unibo.it
E-mails
elena.bazzocchi@unibo.itPhones
+39 0547 339239

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