The objective of the project is the development of doplet epitaxy procedures for the monolithic integration of infrared sensors based on III-V nanostructured materials on Si In particular, we will study different methods for the realization of epitaxial semiconductors materials with electronic quantum confinemet effects for Quanntum Dot Infrared Photodetector fabrication. This project will form a young researcher with excellent knowledge in the field of the droplet epitaxy growth of quantum dots for the monolithic integration of optoelectronics devices on Si.
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