This is a technology or research stand, located in Zone R2 - ICT inside. Stand number: R2-10
GOSSAMER is the ‘giga-scale oriented solid state flash memory for Europe’ project working on non-volatile memory technology.
This exhibit focuses on research projects for large-size solid-state memories. The main research, the ongoing FP7 GOSSAMER project which is now in its third year, is targeting gigabyte flash memories in charge-trap technology. Flash memory is non-volatile computer memory that can be electrically erased and reprogrammed. Charge-trap technology concerns the new memory chips that replace the floating gate with thin layers of material to ‘trap the charge’. GOSSAMER aims to develop the technology down to the 22nm node, the next processing step for semiconductors. A 1 Gbit working demonstrator will be shown, along with the results of other recently finished FP6 projects on alternative memory technologies for solid-state mass storage.
Coordinator: Livio BALDI (Numonyx, R&D Technology, Italy)